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Bahay > Mga Produkto > Discrete Semiconductor Produkto > Transistors - FETs, MOSFETs - Ang mga array > EPC2108ENGRT
EPC2108ENGRT
EPC2108ENGRT
Numero ng Bahagi:
EPC2108ENGRT
Manufacturer:
EPC
Paglalarawan:
TRANS GAN 3N-CH BUMPED DIE
Lead Free Status / Katayuan ng RoHS:
Lead libreng / RoHS compliant
Magagamit na Dami:
58127 Pieces
Oras ng paghatid:
1-2 days
Data sheet:
EPC2108ENGRT.pdf
Pagtatanong

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Kondisyon New & Unused, Original Packing
Pinanggalingan Contact us
Vgs (th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Supplier aparato Package:9-BGA (1.35x1.35)
serye:eGaN®
Rds On (Max) @ Id, Vgs:190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Power - Max:-
packaging:Original-Reel®
Package / Kaso:9-VFBGA
Ibang pangalan:917-EPC2108ENGRDKR
operating Temperature:-40°C ~ 150°C (TJ)
Salalayan Type:Surface Mount
Ang Sensitivity Level (MSL):1 (Unlimited)
Lead Libreng Status / Katayuan ng RoHS:Lead free / RoHS Compliant
Input Kapasidad (Ciss) (Max) @ Vds:22pF @ 30V, 7pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
Type FET:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Tampok:GaNFET (Gallium Nitride)
Alisan ng tubig sa Source Boltahe (Vdss):60V, 100V
Detalyadong Paglalarawan:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Current - Ang patuloy Drain (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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