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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET, MOSFET - Arrays > EPC2108ENGRT
EPC2108ENGRT
EPC2108ENGRT
Delenummer:
EPC2108ENGRT
Produsent:
EPC
Beskrivelse:
TRANS GAN 3N-CH BUMPED DIE
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
58127 Pieces
Leveringstid:
1-2 days
Dataark:
EPC2108ENGRT.pdf
Forespørsel

Introduksjon

We can supply EPC2108ENGRT, use the request quote form to request EPC2108ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2108ENGRT.The price and lead time for EPC2108ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2108ENGRT.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Leverandør Enhetspakke:9-BGA (1.35x1.35)
Serie:eGaN®
Rds På (Maks) @ Id, Vgs:190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Strøm - Maks:-
emballasje:Original-Reel®
Pakke / tilfelle:9-VFBGA
Andre navn:917-EPC2108ENGRDKR
Driftstemperatur:-40°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:22pF @ 30V, 7pF @ 30V
Gateavgift (Qg) (Maks) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET-funksjonen:GaNFET (Gallium Nitride)
Drain til Source Voltage (VDSS):60V, 100V
Detaljert beskrivelse:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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