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Rumah > Produk > Produk Semikonduktor Diskrit > Transistor - FET, MOSFET - Array > EPC2108ENGRT
EPC2108ENGRT
EPC2108ENGRT
Nomor bagian:
EPC2108ENGRT
Pabrikan:
EPC
Deskripsi:
TRANS GAN 3N-CH BUMPED DIE
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
58127 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
EPC2108ENGRT.pdf
Penyelidikan

pengantar

We can supply EPC2108ENGRT, use the request quote form to request EPC2108ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2108ENGRT.The price and lead time for EPC2108ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2108ENGRT.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Paket Perangkat pemasok:9-BGA (1.35x1.35)
Seri:eGaN®
Rds Pada (Max) @ Id, Vgs:190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Listrik - Max:-
Pengemasan:Original-Reel®
Paket / Case:9-VFBGA
Nama lain:917-EPC2108ENGRDKR
Suhu Operasional:-40°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:22pF @ 30V, 7pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
FET Jenis:3 N-Channel (Half Bridge + Synchronous Bootstrap)
Fitur FET:GaNFET (Gallium Nitride)
Tiriskan untuk Sumber Tegangan (Vdss):60V, 100V
Detil Deskripsi:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Current - Continuous Drain (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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