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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Arrays > EPC2108ENGRT
EPC2108ENGRT
EPC2108ENGRT
Varenummer:
EPC2108ENGRT
Fabrikant:
EPC
Beskrivelse:
TRANS GAN 3N-CH BUMPED DIE
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
58127 Pieces
Leveringstid:
1-2 days
Datablad:
EPC2108ENGRT.pdf
Forespørgsel

Introduktion

We can supply EPC2108ENGRT, use the request quote form to request EPC2108ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2108ENGRT.The price and lead time for EPC2108ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2108ENGRT.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Leverandør Device Package:9-BGA (1.35x1.35)
Serie:eGaN®
Rds On (Max) @ Id, Vgs:190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Strøm - Max:-
Emballage:Original-Reel®
Pakke / tilfælde:9-VFBGA
Andre navne:917-EPC2108ENGRDKR
Driftstemperatur:-40°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:22pF @ 30V, 7pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET-funktion:GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS):60V, 100V
Detaljeret beskrivelse:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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