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Hjem > Produkter > Diskrete halvlederprodukter > Transistorer - FET'er, MOSFET'er - Arrays > EPC2107ENGRT
EPC2107ENGRT
EPC2107ENGRT
Varenummer:
EPC2107ENGRT
Fabrikant:
EPC
Beskrivelse:
TRANS GAN 3N-CH 100V BUMPED DIE
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
70880 Pieces
Leveringstid:
1-2 days
Datablad:
EPC2107ENGRT.pdf
Forespørgsel

Introduktion

We can supply EPC2107ENGRT, use the request quote form to request EPC2107ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2107ENGRT.The price and lead time for EPC2107ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2107ENGRT.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Leverandør Device Package:9-BGA (1.35x1.35)
Serie:eGaN®
Rds On (Max) @ Id, Vgs:320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Strøm - Max:-
Emballage:Tape & Reel (TR)
Pakke / tilfælde:9-VFBGA
Andre navne:917-EPC2107ENGRTR
Driftstemperatur:-40°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET-funktion:GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS):100V
Detaljeret beskrivelse:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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