EPC2107ENGRT
EPC2107ENGRT
型號:
EPC2107ENGRT
製造商:
EPC
描述:
TRANS GAN 3N-CH 100V BUMPED DIE
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
70880 Pieces
發貨時間:
1-2 days
數據表:
EPC2107ENGRT.pdf

簡單介紹

We can supply EPC2107ENGRT, use the request quote form to request EPC2107ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2107ENGRT.The price and lead time for EPC2107ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2107ENGRT.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:2.5V @ 100µA, 2.5V @ 20µA
供應商設備封裝:9-BGA (1.35x1.35)
系列:eGaN®
RDS(ON)(最大值)@標識,柵極電壓:320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
功率 - 最大:-
封装:Tape & Reel (TR)
封裝/箱體:9-VFBGA
其他名稱:917-EPC2107ENGRTR
工作溫度:-40°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:16pF @ 50V, 7pF @ 50V
柵極電荷(Qg)(Max)@ Vgs:0.16nC @ 5V, 0.044nC @ 5V
FET型:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET特點:GaNFET (Gallium Nitride)
漏極至源極電壓(Vdss):100V
詳細說明:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
電流 - 25°C連續排水(Id):1.7A, 500mA
Email:[email protected]

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