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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FET, MOSFETy - Pole > EPC2107ENGRT
EPC2107ENGRT
EPC2107ENGRT
Part Number:
EPC2107ENGRT
Výrobce:
EPC
Popis:
TRANS GAN 3N-CH 100V BUMPED DIE
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
70880 Pieces
Čas doručení:
1-2 days
Datový list:
EPC2107ENGRT.pdf
Dotaz

Úvod

We can supply EPC2107ENGRT, use the request quote form to request EPC2107ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2107ENGRT.The price and lead time for EPC2107ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2107ENGRT.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:2.5V @ 100µA, 2.5V @ 20µA
Dodavatel zařízení Package:9-BGA (1.35x1.35)
Série:eGaN®
RDS On (Max) @ Id, Vgs:320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Power - Max:-
Obal:Tape & Reel (TR)
Paket / krabice:9-VFBGA
Ostatní jména:917-EPC2107ENGRTR
Provozní teplota:-40°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
Nabíjení brány (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
Typ FET:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature:GaNFET (Gallium Nitride)
Drain na zdroj napětí (Vdss):100V
Detailní popis:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Proud - kontinuální odtok (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

Rychlé Žádost o cenovou nabídku

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