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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FET, MOSFETy - Pole > EPC2108ENGRT
EPC2108ENGRT
EPC2108ENGRT
Part Number:
EPC2108ENGRT
Výrobce:
EPC
Popis:
TRANS GAN 3N-CH BUMPED DIE
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
58127 Pieces
Čas doručení:
1-2 days
Datový list:
EPC2108ENGRT.pdf
Dotaz

Úvod

We can supply EPC2108ENGRT, use the request quote form to request EPC2108ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2108ENGRT.The price and lead time for EPC2108ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2108ENGRT.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:2.5V @ 100µA, 2.5V @ 20µA
Dodavatel zařízení Package:9-BGA (1.35x1.35)
Série:eGaN®
RDS On (Max) @ Id, Vgs:190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Power - Max:-
Obal:Original-Reel®
Paket / krabice:9-VFBGA
Ostatní jména:917-EPC2108ENGRDKR
Provozní teplota:-40°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:22pF @ 30V, 7pF @ 30V
Nabíjení brány (Qg) (Max) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
Typ FET:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature:GaNFET (Gallium Nitride)
Drain na zdroj napětí (Vdss):60V, 100V
Detailní popis:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Proud - kontinuální odtok (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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