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Dom > proizvodi > Diskretni poluvodički proizvodi > Transistori - FETs, MOSFETs - Arrays > EPC2108ENGRT
EPC2108ENGRT
EPC2108ENGRT
Dio brojeva:
EPC2108ENGRT
Proizvođač:
EPC
Opis:
TRANS GAN 3N-CH BUMPED DIE
Status slobodnog olova / RoHS-a:
Bez olova / RoHS sukladni
Dostupan Količina:
58127 Pieces
Vrijeme isporuke:
1-2 days
Obrazac podataka:
EPC2108ENGRT.pdf
pitanje

Uvod

We can supply EPC2108ENGRT, use the request quote form to request EPC2108ENGRT pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number EPC2108ENGRT.The price and lead time for EPC2108ENGRT depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# EPC2108ENGRT.We look forward to working with you to establish long-term relations of cooperation

Tehnički podaci

Stanje New & Unused, Original Packing
Podrijetlo Contact us
Vgs (th) (maks.) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Paket uređaja za dobavljače:9-BGA (1.35x1.35)
Niz:eGaN®
Rds On (Max) @ Id, Vgs:190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V
Snaga - maks:-
Ambalaža:Original-Reel®
Paket / slučaj:9-VFBGA
Druga imena:917-EPC2108ENGRDKR
Radna temperatura:-40°C ~ 150°C (TJ)
Vrsta montaže:Surface Mount
Razina osjetljivosti vlage (MSL):1 (Unlimited)
Status slobodnog olova / RoHS-a:Lead free / RoHS Compliant
Ulazni kapacitet (Ciss) (maks.) @ Vds:22pF @ 30V, 7pF @ 30V
Punjenje vrata (Qg) (maks.) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
Vrsta FET-a:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET značajka:GaNFET (Gallium Nitride)
Ispustite izvor napona (Vdss):60V, 100V
Detaljan opis:Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
Tekuća - Kontinuirano pražnjenje (Id) @ 25 ° C:1.7A, 500mA
Email:[email protected]

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