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Bahay > Mga Produkto > Discrete Semiconductor Produkto > Transistors - FETs, MOSFETs - Ang mga array > EPC2106ENGRT
EPC2106ENGRT
EPC2106ENGRT
Numero ng Bahagi:
EPC2106ENGRT
Manufacturer:
EPC
Paglalarawan:
TRANS GAN 2N-CH 100V BUMPED DIE
Lead Free Status / Katayuan ng RoHS:
Lead libreng / RoHS compliant
Magagamit na Dami:
38222 Pieces
Oras ng paghatid:
1-2 days
Data sheet:
EPC2106ENGRT.pdf
Pagtatanong

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Kondisyon New & Unused, Original Packing
Pinanggalingan Contact us
Vgs (th) (Max) @ Id:2.5V @ 600µA
Supplier aparato Package:Die
serye:eGaN®
Rds On (Max) @ Id, Vgs:70 mOhm @ 2A, 5V
Power - Max:-
packaging:Original-Reel®
Package / Kaso:Die
Ibang pangalan:917-EPC2106ENGRDKR
operating Temperature:-40°C ~ 150°C (TJ)
Salalayan Type:Surface Mount
Ang Sensitivity Level (MSL):1 (Unlimited)
Tagagawa Standard Lead Time:16 Weeks
Lead Libreng Status / Katayuan ng RoHS:Lead free / RoHS Compliant
Input Kapasidad (Ciss) (Max) @ Vds:75pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:0.73nC @ 5V
Type FET:2 N-Channel (Half Bridge)
FET Tampok:GaNFET (Gallium Nitride)
Alisan ng tubig sa Source Boltahe (Vdss):100V
Detalyadong Paglalarawan:Mosfet Array 2 N-Channel (Half Bridge) 100V 1.7A Surface Mount Die
Current - Ang patuloy Drain (Id) @ 25 ° C:1.7A
Email:[email protected]

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