SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Varenummer:
SI3460DDV-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 20V 7.9A 6-TSOP
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
43284 Pieces
Leveringstid:
1-2 days
Datablad:
SI3460DDV-T1-GE3.pdf

Introduktion

We can supply SI3460DDV-T1-GE3, use the request quote form to request SI3460DDV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3460DDV-T1-GE3.The price and lead time for SI3460DDV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3460DDV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:6-TSOP
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:28 mOhm @ 5.1A, 4.5V
Power Dissipation (Max):1.7W (Ta), 2.7W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:SOT-23-6 Thin, TSOT-23-6
Andre navne:SI3460DDV-T1-GE3TR
SI3460DDVT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:666pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:18nC @ 8V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):1.8V, 4.5V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:N-Channel 20V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:7.9A (Tc)
Email:[email protected]

Quick Request Citat

Varenummer
Antal
Selskab
E-mail
telefon
Kommentarer