Tilstand | New & Unused, Original Packing |
---|---|
Oprindelse | Contact us |
Vgs (th) (Max) @ Id: | 3V @ 250µA |
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | 6-TSOP |
Serie: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 216 mOhm @ 2.2A, 10V |
Power Dissipation (Max): | 2W (Ta), 3.3W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | SOT-23-6 Thin, TSOT-23-6 |
Andre navne: | SI3459BDV-T1-E3-ND SI3459BDV-T1-E3TR |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 33 Weeks |
Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds: | 350pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
FET Type: | P-Channel |
FET-funktion: | - |
Drevspænding (Maks. RDS On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 60V |
Detaljeret beskrivelse: | P-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 2.9A (Tc) |
Email: | [email protected] |