SI3460DDV-T1-GE3
SI3460DDV-T1-GE3
Delenummer:
SI3460DDV-T1-GE3
Produsent:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 20V 7.9A 6-TSOP
Lead Free Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgjengelig mengde:
43284 Pieces
Leveringstid:
1-2 days
Dataark:
SI3460DDV-T1-GE3.pdf

Introduksjon

We can supply SI3460DDV-T1-GE3, use the request quote form to request SI3460DDV-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI3460DDV-T1-GE3.The price and lead time for SI3460DDV-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI3460DDV-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

spesifikasjoner

Tilstand New & Unused, Original Packing
Opprinnelse Contact us
Vgs (th) (Maks) @ Id:1V @ 250µA
Vgs (maks):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Enhetspakke:6-TSOP
Serie:TrenchFET®
Rds På (Maks) @ Id, Vgs:28 mOhm @ 5.1A, 4.5V
Strømdissipasjon (maks):1.7W (Ta), 2.7W (Tc)
emballasje:Tape & Reel (TR)
Pakke / tilfelle:SOT-23-6 Thin, TSOT-23-6
Andre navn:SI3460DDV-T1-GE3TR
SI3460DDVT1GE3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Vannfølsomhetsnivå (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Inputkapasitans (Ciss) (Maks) @ Vds:666pF @ 10V
Gateavgift (Qg) (Maks) @ Vgs:18nC @ 8V
FET Type:N-Channel
FET-funksjonen:-
Drivspenning (Maks. Rds På, Min Rds På):1.8V, 4.5V
Drain til Source Voltage (VDSS):20V
Detaljert beskrivelse:N-Channel 20V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
Strøm - Kontinuerlig avløp (Id) @ 25 ° C:7.9A (Tc)
Email:[email protected]

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