SIS903DN-T1-GE3
SIS903DN-T1-GE3
Onderdeel nummer:
SIS903DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET DUAL P-CHAN POWERPAK 1212
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
55469 Pieces
Aflevertijd:
1-2 days
Data papier:
SIS903DN-T1-GE3.pdf

Invoering

We can supply SIS903DN-T1-GE3, use the request quote form to request SIS903DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS903DN-T1-GE3.The price and lead time for SIS903DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS903DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Leverancier Device Pakket:PowerPAK® 1212-8 Dual
Serie:TrenchFET® Gen III
Rds On (Max) @ Id, VGS:20.1 mOhm @ 5A, 4.5V
Vermogen - Max:2.6W (Ta), 23W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:PowerPAK® 1212-8 Dual
Andere namen:SIS903DN-T1-GE3CT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2565pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Current - Continuous Drain (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

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