SIS903DN-T1-GE3
SIS903DN-T1-GE3
Varenummer:
SIS903DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET DUAL P-CHAN POWERPAK 1212
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
55469 Pieces
Leveringstid:
1-2 days
Datablad:
SIS903DN-T1-GE3.pdf

Introduktion

We can supply SIS903DN-T1-GE3, use the request quote form to request SIS903DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS903DN-T1-GE3.The price and lead time for SIS903DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS903DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Leverandør Device Package:PowerPAK® 1212-8 Dual
Serie:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:20.1 mOhm @ 5A, 4.5V
Strøm - Max:2.6W (Ta), 23W (Tc)
Emballage:Cut Tape (CT)
Pakke / tilfælde:PowerPAK® 1212-8 Dual
Andre navne:SIS903DN-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2565pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
FET Type:2 P-Channel (Dual)
FET-funktion:Standard
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

Quick Request Citat

Varenummer
Antal
Selskab
E-mail
telefon
Kommentarer