SIS903DN-T1-GE3
SIS903DN-T1-GE3
Artikelnummer:
SIS903DN-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET DUAL P-CHAN POWERPAK 1212
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
55469 Pieces
Leveranstid:
1-2 days
Datablad:
SIS903DN-T1-GE3.pdf

Introduktion

We can supply SIS903DN-T1-GE3, use the request quote form to request SIS903DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS903DN-T1-GE3.The price and lead time for SIS903DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS903DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:1V @ 250µA
Leverantörs Device Package:PowerPAK® 1212-8 Dual
Serier:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:20.1 mOhm @ 5A, 4.5V
Effekt - Max:2.6W (Ta), 23W (Tc)
Förpackning:Cut Tape (CT)
Förpackning / Fodral:PowerPAK® 1212-8 Dual
Andra namn:SIS903DN-T1-GE3CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2565pF @ 10V
Gate Laddning (Qg) (Max) @ Vgs:42nC @ 10V
FET-typ:2 P-Channel (Dual)
FET-funktionen:Standard
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:6A (Tc)
Email:[email protected]

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