SIS778DN-T1-GE3
SIS778DN-T1-GE3
Artikelnummer:
SIS778DN-T1-GE3
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 30V 35A POWERPAK1212
tillgänglig kvantitet:
78646 Pieces
Leveranstid:
1-2 days
Datablad:
SIS778DN-T1-GE3.pdf

Introduktion

We can supply SIS778DN-T1-GE3, use the request quote form to request SIS778DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS778DN-T1-GE3.The price and lead time for SIS778DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS778DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:2.2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:PowerPAK® 1212-8
Serier:-
Rds On (Max) @ Id, Vgs:5 mOhm @ 10A, 10V
Effektdissipation (Max):52W (Tc)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:PowerPAK® 1212-8
Driftstemperatur:-50°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Inputkapacitans (Ciss) (Max) @ Vds:1390pF @ 15V
Gate Laddning (Qg) (Max) @ Vgs:42.5nC @ 10V
FET-typ:N-Channel
FET-funktionen:Schottky Diode (Body)
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):30V
detaljerad beskrivning:N-Channel 30V 35A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:35A (Tc)
Email:[email protected]

Snabbsökcitation

Artikelnummer
Kvantitet
Företag
E-post
Telefon
kommentarer