SIS778DN-T1-GE3
SIS778DN-T1-GE3
Parça Numarası:
SIS778DN-T1-GE3
Üretici firma:
Electro-Films (EFI) / Vishay
Açıklama:
MOSFET N-CH 30V 35A POWERPAK1212
Mevcut Miktarı:
78646 Pieces
Teslimat süresi:
1-2 days
Veri Sayfası:
SIS778DN-T1-GE3.pdf

Giriş

We can supply SIS778DN-T1-GE3, use the request quote form to request SIS778DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS778DN-T1-GE3.The price and lead time for SIS778DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS778DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Özellikler

Şart New & Unused, Original Packing
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Id @ Vgs (th) (Max):2.2V @ 250µA
Vgs (Maks.):±20V
teknoloji:MOSFET (Metal Oxide)
Tedarikçi Cihaz Paketi:PowerPAK® 1212-8
Dizi:-
Id, VGS @ rds On (Max):5 mOhm @ 10A, 10V
Güç Tüketimi (Max):52W (Tc)
paketleme:Tape & Reel (TR)
Paket / Kutu:PowerPAK® 1212-8
Çalışma sıcaklığı:-50°C ~ 150°C (TJ)
bağlantı Tipi:Surface Mount
Giriş Kapasitesi (Ciss) (Max) @ Vds:1390pF @ 15V
Gate Charge (Qg) (Maks) @ Vgs:42.5nC @ 10V
FET Tipi:N-Channel
FET Özelliği:Schottky Diode (Body)
Sürücü Gerilimi (Maks Rd, Min Rd Salı):4.5V, 10V
Kaynak Gerilim boşaltın (VDSlerin):30V
Detaylı Açıklama:N-Channel 30V 35A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Akım - 25 ° C'de Sürekli Boşaltma (Id):35A (Tc)
Email:[email protected]

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