SIS778DN-T1-GE3
SIS778DN-T1-GE3
Part Number:
SIS778DN-T1-GE3
Producent:
Electro-Films (EFI) / Vishay
Opis:
MOSFET N-CH 30V 35A POWERPAK1212
Dostępna Ilość:
78646 Pieces
Czas dostawy:
1-2 days
Arkusz danych:
SIS778DN-T1-GE3.pdf

Wprowadzenie

We can supply SIS778DN-T1-GE3, use the request quote form to request SIS778DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS778DN-T1-GE3.The price and lead time for SIS778DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS778DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specyfikacje

Stan New & Unused, Original Packing
Pochodzenie Contact us
VGS (th) (Max) @ Id:2.2V @ 250µA
Vgs (maks.):±20V
Technologia:MOSFET (Metal Oxide)
Dostawca urządzeń Pakiet:PowerPAK® 1212-8
Seria:-
RDS (Max) @ ID, Vgs:5 mOhm @ 10A, 10V
Strata mocy (max):52W (Tc)
Opakowania:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
temperatura robocza:-50°C ~ 150°C (TJ)
Rodzaj mocowania:Surface Mount
Pojemność wejściowa (Ciss) (maks.) @ Vds:1390pF @ 15V
Opłata bramkowa (Qg) (maksymalna) @ Vgs:42.5nC @ 10V
Rodzaj FET:N-Channel
Cecha FET:Schottky Diode (Body)
Napięcie Napędu (Max Rds On, Min Rds On):4.5V, 10V
Spust do źródła napięcia (Vdss):30V
szczegółowy opis:N-Channel 30V 35A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Prąd - Ciągły Odpływ (Id) @ 25 ° C:35A (Tc)
Email:[email protected]

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