SIS903DN-T1-GE3
SIS903DN-T1-GE3
Artikelnummer:
SIS903DN-T1-GE3
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET DUAL P-CHAN POWERPAK 1212
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
55469 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SIS903DN-T1-GE3.pdf

Einführung

We can supply SIS903DN-T1-GE3, use the request quote form to request SIS903DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS903DN-T1-GE3.The price and lead time for SIS903DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS903DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:PowerPAK® 1212-8 Dual
Serie:TrenchFET® Gen III
Rds On (Max) @ Id, Vgs:20.1 mOhm @ 5A, 4.5V
Leistung - max:2.6W (Ta), 23W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:PowerPAK® 1212-8 Dual
Andere Namen:SIS903DN-T1-GE3CT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2565pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
Typ FET:2 P-Channel (Dual)
FET-Merkmal:Standard
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6A (Tc)
Email:[email protected]

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