SIS903DN-T1-GE3
SIS903DN-T1-GE3
型號:
SIS903DN-T1-GE3
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET DUAL P-CHAN POWERPAK 1212
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
55469 Pieces
發貨時間:
1-2 days
數據表:
SIS903DN-T1-GE3.pdf

簡單介紹

We can supply SIS903DN-T1-GE3, use the request quote form to request SIS903DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS903DN-T1-GE3.The price and lead time for SIS903DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS903DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:1V @ 250µA
供應商設備封裝:PowerPAK® 1212-8 Dual
系列:TrenchFET® Gen III
RDS(ON)(最大值)@標識,柵極電壓:20.1 mOhm @ 5A, 4.5V
功率 - 最大:2.6W (Ta), 23W (Tc)
封装:Cut Tape (CT)
封裝/箱體:PowerPAK® 1212-8 Dual
其他名稱:SIS903DN-T1-GE3CT
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
輸入電容(Ciss)(Max)@ Vds:2565pF @ 10V
柵極電荷(Qg)(Max)@ Vgs:42nC @ 10V
FET型:2 P-Channel (Dual)
FET特點:Standard
漏極至源極電壓(Vdss):20V
詳細說明:Mosfet Array 2 P-Channel (Dual) 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK® 1212-8 Dual
電流 - 25°C連續排水(Id):6A (Tc)
Email:[email protected]

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