SIS888DN-T1-GE3
SIS888DN-T1-GE3
Varenummer:
SIS888DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 150V 20.2A 1212-8S
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
44183 Pieces
Leveringstid:
1-2 days
Datablad:
SIS888DN-T1-GE3.pdf

Introduktion

We can supply SIS888DN-T1-GE3, use the request quote form to request SIS888DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS888DN-T1-GE3.The price and lead time for SIS888DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS888DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4.2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® 1212-8S (3.3x3.3)
Serie:ThunderFET®
Rds On (Max) @ Id, Vgs:58 mOhm @ 10A, 10V
Power Dissipation (Max):52W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® 1212-8S
Andre navne:SIS888DN-T1-GE3TR
Driftstemperatur:-55°C ~ 150°C (TA)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:420pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:14.5nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):7.5V, 10V
Afløb til Source Voltage (VDSS):150V
Detaljeret beskrivelse:N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:20.2A (Tc)
Email:[email protected]

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