SIS888DN-T1-GE3
SIS888DN-T1-GE3
Nomor bagian:
SIS888DN-T1-GE3
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 150V 20.2A 1212-8S
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
44183 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SIS888DN-T1-GE3.pdf

pengantar

We can supply SIS888DN-T1-GE3, use the request quote form to request SIS888DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS888DN-T1-GE3.The price and lead time for SIS888DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS888DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:4.2V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:PowerPAK® 1212-8S (3.3x3.3)
Seri:ThunderFET®
Rds Pada (Max) @ Id, Vgs:58 mOhm @ 10A, 10V
Power Disipasi (Max):52W (Tc)
Pengemasan:Tape & Reel (TR)
Paket / Case:PowerPAK® 1212-8S
Nama lain:SIS888DN-T1-GE3TR
Suhu Operasional:-55°C ~ 150°C (TA)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:420pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:14.5nC @ 10V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):7.5V, 10V
Tiriskan untuk Sumber Tegangan (Vdss):150V
Detil Deskripsi:N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25 ° C:20.2A (Tc)
Email:[email protected]

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