SIS888DN-T1-GE3
SIS888DN-T1-GE3
Onderdeel nummer:
SIS888DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 150V 20.2A 1212-8S
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
44183 Pieces
Aflevertijd:
1-2 days
Data papier:
SIS888DN-T1-GE3.pdf

Invoering

We can supply SIS888DN-T1-GE3, use the request quote form to request SIS888DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS888DN-T1-GE3.The price and lead time for SIS888DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS888DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4.2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® 1212-8S (3.3x3.3)
Serie:ThunderFET®
Rds On (Max) @ Id, VGS:58 mOhm @ 10A, 10V
Vermogensverlies (Max):52W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® 1212-8S
Andere namen:SIS888DN-T1-GE3TR
Temperatuur:-55°C ~ 150°C (TA)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:420pF @ 75V
Gate Charge (Qg) (Max) @ Vgs:14.5nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):7.5V, 10V
Drain naar de Bron Voltage (Vdss):150V
gedetailleerde beschrijving:N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Current - Continuous Drain (Id) @ 25 ° C:20.2A (Tc)
Email:[email protected]

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