SIS626DN-T1-GE3
SIS626DN-T1-GE3
Onderdeel nummer:
SIS626DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 25V 16A POWERPAK1212
beschikbare kwaliteit:
40906 Pieces
Aflevertijd:
1-2 days
Data papier:
SIS626DN-T1-GE3.pdf

Invoering

We can supply SIS626DN-T1-GE3, use the request quote form to request SIS626DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS626DN-T1-GE3.The price and lead time for SIS626DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS626DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
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VGS (th) (Max) @ Id:1.4V @ 250µA
Vgs (Max):±12V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® 1212-8
Serie:-
Rds On (Max) @ Id, VGS:9 mOhm @ 10A, 10V
Vermogensverlies (Max):52W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® 1212-8
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1925pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):2.5V, 10V
Drain naar de Bron Voltage (Vdss):25V
gedetailleerde beschrijving:N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25 ° C:16A (Tc)
Email:[email protected]

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