SIS626DN-T1-GE3
SIS626DN-T1-GE3
Part Number:
SIS626DN-T1-GE3
Výrobce:
Electro-Films (EFI) / Vishay
Popis:
MOSFET N-CH 25V 16A POWERPAK1212
dostupné množství:
40906 Pieces
Čas doručení:
1-2 days
Datový list:
SIS626DN-T1-GE3.pdf

Úvod

We can supply SIS626DN-T1-GE3, use the request quote form to request SIS626DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS626DN-T1-GE3.The price and lead time for SIS626DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS626DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:1.4V @ 250µA
Vgs (Max):±12V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:PowerPAK® 1212-8
Série:-
RDS On (Max) @ Id, Vgs:9 mOhm @ 10A, 10V
Ztráta energie (Max):52W (Tc)
Obal:Tape & Reel (TR)
Paket / krabice:PowerPAK® 1212-8
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Surface Mount
Vstupní kapacita (Ciss) (Max) @ Vds:1925pF @ 15V
Nabíjení brány (Qg) (Max) @ Vgs:60nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):2.5V, 10V
Drain na zdroj napětí (Vdss):25V
Detailní popis:N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Proud - kontinuální odtok (Id) @ 25 ° C:16A (Tc)
Email:[email protected]

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