SIS626DN-T1-GE3
SIS626DN-T1-GE3
Part Number:
SIS626DN-T1-GE3
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 25V 16A POWERPAK1212
Available Quantity:
40906 Pieces
Delivery Time:
1-2 days
Data sheet:
SIS626DN-T1-GE3.pdf

Introduction

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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:1.4V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® 1212-8
Series:-
Rds On (Max) @ Id, Vgs:9 mOhm @ 10A, 10V
Power Dissipation (Max):52W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® 1212-8
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1925pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Drain to Source Voltage (Vdss):25V
Detailed Description:N-Channel 25V 16A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Email:[email protected]

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