SIS776DN-T1-GE3
SIS776DN-T1-GE3
Onderdeel nummer:
SIS776DN-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 30V 35A 1212-8
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
52610 Pieces
Aflevertijd:
1-2 days
Data papier:
SIS776DN-T1-GE3.pdf

Invoering

We can supply SIS776DN-T1-GE3, use the request quote form to request SIS776DN-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS776DN-T1-GE3.The price and lead time for SIS776DN-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS776DN-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PowerPAK® 1212-8
Serie:SkyFET®, TrenchFET®
Rds On (Max) @ Id, VGS:6.2 mOhm @ 10A, 10V
Vermogensverlies (Max):3.8W (Ta), 52W (Tc)
Packaging:Tape & Reel (TR)
Verpakking / doos:PowerPAK® 1212-8
Temperatuur:-50°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:15 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1360pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:36nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Body)
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):30V
gedetailleerde beschrijving:N-Channel 30V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25 ° C:35A (Tc)
Email:[email protected]

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