SIS612EDNT-T1-GE3
SIS612EDNT-T1-GE3
Varenummer:
SIS612EDNT-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 20V 50A SMT
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
7334 Pieces
Leveringstid:
1-2 days
Datablad:
SIS612EDNT-T1-GE3.pdf

Introduktion

We can supply SIS612EDNT-T1-GE3, use the request quote form to request SIS612EDNT-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIS612EDNT-T1-GE3.The price and lead time for SIS612EDNT-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIS612EDNT-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:1.2V @ 1mA
Vgs (Max):±12V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PowerPAK® 1212-8S (3.3x3.3)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:3.9 mOhm @ 14A, 4.5V
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:PowerPAK® 1212-8S
Andre navne:Q8619879
SIS612EDNT-T1-GE3-ND
SIS612EDNT-T1-GE3TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:2060pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):2.5V, 4.5V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:N-Channel 20V 50A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:50A (Tc)
Email:[email protected]

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