SI8469DB-T2-E1
SI8469DB-T2-E1
Onderdeel nummer:
SI8469DB-T2-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET P-CH 8V 3.6A MICRO
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
10763 Pieces
Aflevertijd:
1-2 days
Data papier:
SI8469DB-T2-E1.pdf

Invoering

We can supply SI8469DB-T2-E1, use the request quote form to request SI8469DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8469DB-T2-E1.The price and lead time for SI8469DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8469DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Technologie:MOSFET (Metal Oxide)
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:64 mOhm @ 1.5A, 4.5V
Vermogensverlies (Max):780mW (Ta), 1.8W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:4-UFBGA
Andere namen:SI8469DB-T2-E1CT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V
Drain naar de Bron Voltage (Vdss):8V
gedetailleerde beschrijving:P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25 ° C:4.6A (Ta)
Email:[email protected]

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