Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 800mV @ 250µA |
Vgs (Max): | ±5V |
Technologie: | MOSFET (Metal Oxide) |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 64 mOhm @ 1.5A, 4.5V |
Vermogensverlies (Max): | 780mW (Ta), 1.8W (Tc) |
Packaging: | Cut Tape (CT) |
Verpakking / doos: | 4-UFBGA |
Andere namen: | SI8469DB-T2-E1CT |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 4V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V |
Drain naar de Bron Voltage (Vdss): | 8V |
gedetailleerde beschrijving: | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount |
Current - Continuous Drain (Id) @ 25 ° C: | 4.6A (Ta) |
Email: | [email protected] |