SI8469DB-T2-E1
SI8469DB-T2-E1
Artikelnummer:
SI8469DB-T2-E1
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET P-CH 8V 3.6A MICRO
Bleifreier Status / RoHS Status:
Bleifrei / RoHS-konform
verfügbare Anzahl:
10763 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI8469DB-T2-E1.pdf

Einführung

We can supply SI8469DB-T2-E1, use the request quote form to request SI8469DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8469DB-T2-E1.The price and lead time for SI8469DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8469DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Technologie:MOSFET (Metal Oxide)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:64 mOhm @ 1.5A, 4.5V
Verlustleistung (max):780mW (Ta), 1.8W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:4-UFBGA
Andere Namen:SI8469DB-T2-E1CT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V
Drain-Source-Spannung (Vdss):8V
detaillierte Beschreibung:P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.6A (Ta)
Email:[email protected]

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