SI8469DB-T2-E1
- 型號:
- SI8469DB-T2-E1
- 描述:
- MOSFET P-CH 8V 3.6A MICRO
- 無鉛狀態/ RoHS狀態:
- 無鉛/符合RoHS
- 庫存數量:
- 10763 Pieces
- 發貨時間:
- 1-2 days
簡單介紹
We can supply SI8469DB-T2-E1, use the request quote form to request SI8469DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8469DB-T2-E1.The price and lead time for SI8469DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8469DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 狀況 | New & Unused, Original Packing |
|---|---|
| 來源 | Contact us |
| VGS（TH）（最大）@標識: | 800mV @ 250µA |
| Vgs（最大）: | ±5V |
| 技術: | MOSFET (Metal Oxide) |
| 系列: | TrenchFET® |
| RDS（ON）（最大值）@標識，柵極電壓: | 64 mOhm @ 1.5A, 4.5V |
| 功率耗散（最大）: | 780mW (Ta), 1.8W (Tc) |
| 封装: | Cut Tape (CT) |
| 封裝/箱體: | 4-UFBGA |
| 其他名稱: | SI8469DB-T2-E1CT |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 濕度敏感度等級（MSL）: | 1 (Unlimited) |
| 無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
| 輸入電容（Ciss）（Max）@ Vds: | 900pF @ 4V |
| 柵極電荷（Qg）（Max）@ Vgs: | 17nC @ 4.5V |
| FET型: | P-Channel |
| FET特點: | - |
| 驅動電壓（最大Rds開，最小Rds開）: | 4.5V |
| 漏極至源極電壓（Vdss）: | 8V |
| 詳細說明: | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount |
| 電流 - 25°C連續排水（Id）: | 4.6A (Ta) |
| Email: | [email protected] |
