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SI8469DB-T2-E1
- Part Number:
- SI8469DB-T2-E1
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET P-CH 8V 3.6A MICRO
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 10763 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SI8469DB-T2-E1.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
| Vgs (Max): | ±5V |
| Technology: | MOSFET (Metal Oxide) |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 64 mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max): | 780mW (Ta), 1.8W (Tc) |
| Packaging: | Cut Tape (CT) |
| Package / Case: | 4-UFBGA |
| Other Names: | SI8469DB-T2-E1CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Drain to Source Voltage (Vdss): | 8V |
| Detailed Description: | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount |
| Current - Continuous Drain (Id) @ 25°C: | 4.6A (Ta) |
| Email: | [email protected] |
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