SI8469DB-T2-E1
SI8469DB-T2-E1
Varenummer:
SI8469DB-T2-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET P-CH 8V 3.6A MICRO
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
10763 Pieces
Leveringstid:
1-2 days
Datablad:
SI8469DB-T2-E1.pdf

Introduktion

We can supply SI8469DB-T2-E1, use the request quote form to request SI8469DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8469DB-T2-E1.The price and lead time for SI8469DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8469DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:800mV @ 250µA
Vgs (Max):±5V
Teknologi:MOSFET (Metal Oxide)
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:64 mOhm @ 1.5A, 4.5V
Power Dissipation (Max):780mW (Ta), 1.8W (Tc)
Emballage:Cut Tape (CT)
Pakke / tilfælde:4-UFBGA
Andre navne:SI8469DB-T2-E1CT
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
FET Type:P-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):4.5V
Afløb til Source Voltage (VDSS):8V
Detaljeret beskrivelse:P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:4.6A (Ta)
Email:[email protected]

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