Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 1.2V @ 250µA |
Vgs (Max): | ±12V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 4-Microfoot |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 44 mOhm @ 1.5A, 10V |
Vermogensverlies (Max): | 780mW (Ta), 1.8W (Tc) |
Packaging: | Tape & Reel (TR) |
Verpakking / doos: | 4-UFBGA |
Andere namen: | SI8489EDB-T2-E1TR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 765pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
FET Type: | P-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 2.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 20V |
gedetailleerde beschrijving: | P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot |
Current - Continuous Drain (Id) @ 25 ° C: | - |
Email: | [email protected] |