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SI8819EDB-T2-E1
- Part Number:
- SI8819EDB-T2-E1
- Manufacturer:
- Electro-Films (EFI) / Vishay
- Description:
- MOSFET P-CH 12V 2.9A 4-MICROFOOT
- Available Quantity:
- 68646 Pieces
- Delivery Time:
- 1-2 days
- Data sheet:
- SI8819EDB-T2-E1.pdf
Introduction
Specifications
| Condition | New & Unused, Original Packing |
|---|---|
| Origin | Contact us |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 4-MICRO FOOT® (0.8x0.8) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 1.5A, 3.7V |
| Power Dissipation (Max): | 900mW (Ta) |
| Package / Case: | 4-XFBGA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 8V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 3.7V |
| Drain to Source Voltage (Vdss): | 12V |
| Detailed Description: | P-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8) |
| Current - Continuous Drain (Id) @ 25°C: | 2.9A (Ta) |
| Email: | [email protected] |
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