SI8810EDB-T2-E1
SI8810EDB-T2-E1
Part Number:
SI8810EDB-T2-E1
Manufacturer:
Electro-Films (EFI) / Vishay
Description:
MOSFET N-CH 20V 2.1A MICROFOOT
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
23984 Pieces
Delivery Time:
1-2 days
Data sheet:
SI8810EDB-T2-E1.pdf

Introduction

ACTIVE-COMPONENT is the stocking distributor for SI8810EDB-T2-E1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI8810EDB-T2-E1 by email, we will give you a best price according your plan.
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Specifications

Condition New & Unused, Original Packing
Origin Contact us
Vgs(th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-Microfoot
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:72 mOhm @ 1A, 4.5V
Power Dissipation (Max):500mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:4-XFBGA
Other Names:SI8810EDB-T2-E1TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:46 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:245pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:8nC @ 8V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):20V
Detailed Description:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Current - Continuous Drain (Id) @ 25°C:-
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