SI8810EDB-T2-E1
SI8810EDB-T2-E1
Varenummer:
SI8810EDB-T2-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beskrivelse:
MOSFET N-CH 20V 2.1A MICROFOOT
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
23984 Pieces
Leveringstid:
1-2 days
Datablad:
SI8810EDB-T2-E1.pdf

Introduktion

We can supply SI8810EDB-T2-E1, use the request quote form to request SI8810EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8810EDB-T2-E1.The price and lead time for SI8810EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8810EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:4-Microfoot
Serie:TrenchFET®
Rds On (Max) @ Id, Vgs:72 mOhm @ 1A, 4.5V
Power Dissipation (Max):500mW (Ta)
Emballage:Tape & Reel (TR)
Pakke / tilfælde:4-XFBGA
Andre navne:SI8810EDB-T2-E1TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstype:Surface Mount
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Fabrikantens standard ledetid:46 Weeks
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:245pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:8nC @ 8V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):1.5V, 4.5V
Afløb til Source Voltage (VDSS):20V
Detaljeret beskrivelse:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:-
Email:[email protected]

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