SI8810EDB-T2-E1
SI8810EDB-T2-E1
Onderdeel nummer:
SI8810EDB-T2-E1
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 20V 2.1A MICROFOOT
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
23984 Pieces
Aflevertijd:
1-2 days
Data papier:
SI8810EDB-T2-E1.pdf

Invoering

We can supply SI8810EDB-T2-E1, use the request quote form to request SI8810EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8810EDB-T2-E1.The price and lead time for SI8810EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8810EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:4-Microfoot
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:72 mOhm @ 1A, 4.5V
Vermogensverlies (Max):500mW (Ta)
Packaging:Tape & Reel (TR)
Verpakking / doos:4-XFBGA
Andere namen:SI8810EDB-T2-E1TR
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:46 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:245pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:8nC @ 8V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):1.5V, 4.5V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Current - Continuous Drain (Id) @ 25 ° C:-
Email:[email protected]

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