SI8810EDB-T2-E1
SI8810EDB-T2-E1
Artikelnummer:
SI8810EDB-T2-E1
Tillverkare:
Electro-Films (EFI) / Vishay
Beskrivning:
MOSFET N-CH 20V 2.1A MICROFOOT
Ledningsfri status / RoHS-status:
Blyfri / Överensstämmer med RoHS
tillgänglig kvantitet:
23984 Pieces
Leveranstid:
1-2 days
Datablad:
SI8810EDB-T2-E1.pdf

Introduktion

We can supply SI8810EDB-T2-E1, use the request quote form to request SI8810EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8810EDB-T2-E1.The price and lead time for SI8810EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8810EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Tillstånd New & Unused, Original Packing
Ursprung Contact us
Vgs (th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:4-Microfoot
Serier:TrenchFET®
Rds On (Max) @ Id, Vgs:72 mOhm @ 1A, 4.5V
Effektdissipation (Max):500mW (Ta)
Förpackning:Tape & Reel (TR)
Förpackning / Fodral:4-XFBGA
Andra namn:SI8810EDB-T2-E1TR
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Surface Mount
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:46 Weeks
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:245pF @ 10V
Gate Laddning (Qg) (Max) @ Vgs:8nC @ 8V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):1.5V, 4.5V
Avlopp till källspänning (Vdss):20V
detaljerad beskrivning:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:-
Email:[email protected]

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