SI8810EDB-T2-E1
SI8810EDB-T2-E1
Nomor bagian:
SI8810EDB-T2-E1
Pabrikan:
Electro-Films (EFI) / Vishay
Deskripsi:
MOSFET N-CH 20V 2.1A MICROFOOT
Memimpin Status Bebas / Status RoHS:
Memimpin bebas / RoHS Compliant
Kuantitas yang Tersedia:
23984 Pieces
Waktu pengiriman:
1-2 days
Lembaran data:
SI8810EDB-T2-E1.pdf

pengantar

We can supply SI8810EDB-T2-E1, use the request quote form to request SI8810EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8810EDB-T2-E1.The price and lead time for SI8810EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8810EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

Spesifikasi

Kondisi New & Unused, Original Packing
Asal Contact us
Vgs (th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Teknologi:MOSFET (Metal Oxide)
Paket Perangkat pemasok:4-Microfoot
Seri:TrenchFET®
Rds Pada (Max) @ Id, Vgs:72 mOhm @ 1A, 4.5V
Power Disipasi (Max):500mW (Ta)
Pengemasan:Tape & Reel (TR)
Paket / Case:4-XFBGA
Nama lain:SI8810EDB-T2-E1TR
Suhu Operasional:-55°C ~ 150°C (TJ)
mount Jenis:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:46 Weeks
Status Gratis Memimpin / Status RoHS:Lead free / RoHS Compliant
Kapasitansi Masukan (Ciss) (Max) @ VDS:245pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:8nC @ 8V
FET Jenis:N-Channel
Fitur FET:-
Drive Voltage (Max Rds On, Min RDS Aktif):1.5V, 4.5V
Tiriskan untuk Sumber Tegangan (Vdss):20V
Detil Deskripsi:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
Current - Continuous Drain (Id) @ 25 ° C:-
Email:[email protected]

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