SI8819EDB-T2-E1
- 型號:
- SI8819EDB-T2-E1
- 描述:
- MOSFET P-CH 12V 2.9A 4-MICROFOOT
- 庫存數量:
- 68646 Pieces
- 發貨時間:
- 1-2 days
簡單介紹
We can supply SI8819EDB-T2-E1, use the request quote form to request SI8819EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8819EDB-T2-E1.The price and lead time for SI8819EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8819EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation
產品特性
| 狀況 | New & Unused, Original Packing |
|---|---|
| 來源 | Contact us |
| VGS（TH）（最大）@標識: | 900mV @ 250µA |
| Vgs（最大）: | ±8V |
| 技術: | MOSFET (Metal Oxide) |
| 供應商設備封裝: | 4-MICRO FOOT® (0.8x0.8) |
| 系列: | - |
| RDS（ON）（最大值）@標識，柵極電壓: | 80 mOhm @ 1.5A, 3.7V |
| 功率耗散（最大）: | 900mW (Ta) |
| 封裝/箱體: | 4-XFBGA |
| 工作溫度: | -55°C ~ 150°C (TJ) |
| 安裝類型: | Surface Mount |
| 輸入電容（Ciss）（Max）@ Vds: | 650pF @ 6V |
| 柵極電荷（Qg）（Max）@ Vgs: | 17nC @ 8V |
| FET型: | P-Channel |
| FET特點: | - |
| 驅動電壓（最大Rds開，最小Rds開）: | 1.5V, 3.7V |
| 漏極至源極電壓（Vdss）: | 12V |
| 詳細說明: | P-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8) |
| 電流 - 25°C連續排水（Id）: | 2.9A (Ta) |
| Email: | [email protected] |
