SI8812DB-T2-E1
SI8812DB-T2-E1
型號:
SI8812DB-T2-E1
製造商:
Electro-Films (EFI) / Vishay
描述:
MOSFET N-CH 20V MICROFOOT
無鉛狀態/ RoHS狀態:
無鉛/符合RoHS
庫存數量:
21733 Pieces
發貨時間:
1-2 days
數據表:
SI8812DB-T2-E1.pdf

簡單介紹

We can supply SI8812DB-T2-E1, use the request quote form to request SI8812DB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8812DB-T2-E1.The price and lead time for SI8812DB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8812DB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

產品特性

狀況 New & Unused, Original Packing
來源 Contact us
VGS(TH)(最大)@標識:1V @ 250µA
Vgs(最大):±5V
技術:MOSFET (Metal Oxide)
供應商設備封裝:4-Microfoot
系列:TrenchFET®
RDS(ON)(最大值)@標識,柵極電壓:59 mOhm @ 1A, 4.5V
功率耗散(最大):500mW (Ta)
封装:Tape & Reel (TR)
封裝/箱體:4-UFBGA
其他名稱:SI8812DB-T2-E1TR
SI8812DBT2E1
工作溫度:-55°C ~ 150°C (TJ)
安裝類型:Surface Mount
濕度敏感度等級(MSL):1 (Unlimited)
無鉛狀態/ RoHS狀態:Lead free / RoHS Compliant
柵極電荷(Qg)(Max)@ Vgs:17nC @ 8V
FET型:N-Channel
FET特點:-
驅動電壓(最大Rds開,最小Rds開):1.2V, 4.5V
漏極至源極電壓(Vdss):20V
詳細說明:N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot
電流 - 25°C連續排水(Id):-
Email:[email protected]

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