SI8819EDB-T2-E1
Artikelnummer:
SI8819EDB-T2-E1
Hersteller:
Electro-Films (EFI) / Vishay
Beschreibung:
MOSFET P-CH 12V 2.9A 4-MICROFOOT
verfügbare Anzahl:
68646 Pieces
Lieferzeit:
1-2 days
Datenblatt:
SI8819EDB-T2-E1.pdf

Einführung

We can supply SI8819EDB-T2-E1, use the request quote form to request SI8819EDB-T2-E1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI8819EDB-T2-E1.The price and lead time for SI8819EDB-T2-E1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI8819EDB-T2-E1.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Bedingung New & Unused, Original Packing
Ursprung Contact us
VGS (th) (Max) @ Id:900mV @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:4-MICRO FOOT® (0.8x0.8)
Serie:-
Rds On (Max) @ Id, Vgs:80 mOhm @ 1.5A, 3.7V
Verlustleistung (max):900mW (Ta)
Verpackung / Gehäuse:4-XFBGA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Eingabekapazität (Ciss) (Max) @ Vds:650pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:17nC @ 8V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.5V, 3.7V
Drain-Source-Spannung (Vdss):12V
detaillierte Beschreibung:P-Channel 12V 2.9A (Ta) 900mW (Ta) Surface Mount 4-MICRO FOOT® (0.8x0.8)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.9A (Ta)
Email:[email protected]

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