IPS110N12N3GBKMA1
IPS110N12N3GBKMA1
Onderdeel nummer:
IPS110N12N3GBKMA1
Fabrikant:
International Rectifier (Infineon Technologies)
Beschrijving:
MOSFET N-CH 120V 75A TO251-3
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
38027 Pieces
Aflevertijd:
1-2 days
Data papier:
IPS110N12N3GBKMA1.pdf

Invoering

We can supply IPS110N12N3GBKMA1, use the request quote form to request IPS110N12N3GBKMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPS110N12N3GBKMA1.The price and lead time for IPS110N12N3GBKMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPS110N12N3GBKMA1.We look forward to working with you to establish long-term relations of cooperation

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Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PG-TO251-3
Serie:OptiMOS™
Rds On (Max) @ Id, VGS:11 mOhm @ 75A, 10V
Vermogensverlies (Max):136W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Stub Leads, IPak
Andere namen:IPS110N12N3 G
IPS110N12N3 G-ND
IPS110N12N3GBKMA1TR-ND
SP000674456
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4310pF @ 60V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):120V
gedetailleerde beschrijving:N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3
Current - Continuous Drain (Id) @ 25 ° C:75A (Tc)
Email:[email protected]

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