Staat | New & Unused, Original Packing |
---|---|
Oorsprong | Contact us |
VGS (th) (Max) @ Id: | 2.4V @ 83µA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | PG-TO251-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, VGS: | 11.8 mOhm @ 69A, 10V |
Vermogensverlies (Max): | 125W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-251-3 Stub Leads, IPak |
Andere namen: | IPS12CN10L G IPS12CN10L G-ND SP000311530 |
Temperatuur: | -55°C ~ 175°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 5600pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 100V |
gedetailleerde beschrijving: | N-Channel 100V 69A (Tc) 125W (Tc) Through Hole PG-TO251-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 69A (Tc) |
Email: | [email protected] |