IPS118N10N G
IPS118N10N G
Onderdeel nummer:
IPS118N10N G
Fabrikant:
International Rectifier (Infineon Technologies)
Beschrijving:
MOSFET N-CH 100V 75A TO251-3
Leid Free Status / RoHS Status:
Loodvrij / RoHS-conform
beschikbare kwaliteit:
8011 Pieces
Aflevertijd:
1-2 days
Data papier:
IPS118N10N G.pdf

Invoering

We can supply IPS118N10N G, use the request quote form to request IPS118N10N G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPS118N10N G.The price and lead time for IPS118N10N G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPS118N10N G.We look forward to working with you to establish long-term relations of cooperation

bestek

Staat New & Unused, Original Packing
Oorsprong Contact us
VGS (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:PG-TO251-3
Serie:OptiMOS™
Rds On (Max) @ Id, VGS:11.8 mOhm @ 75A, 10V
Vermogensverlies (Max):125W (Tc)
Packaging:Tube
Verpakking / doos:TO-251-3 Stub Leads, IPak
Andere namen:IPS118N10N G-ND
IPS118N10NG
SP000475890
SP000680974
Temperatuur:-55°C ~ 175°C (TJ)
montage Type:Through Hole
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:4320pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):100V
gedetailleerde beschrijving:N-Channel 100V 75A (Tc) 125W (Tc) Through Hole PG-TO251-3
Current - Continuous Drain (Id) @ 25 ° C:75A (Tc)
Email:[email protected]

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