IPS110N12N3GBKMA1
IPS110N12N3GBKMA1
Varenummer:
IPS110N12N3GBKMA1
Fabrikant:
International Rectifier (Infineon Technologies)
Beskrivelse:
MOSFET N-CH 120V 75A TO251-3
Blyfri Status / RoHS Status:
Blyfri / RoHS-kompatibel
Tilgængelig mængde:
38027 Pieces
Leveringstid:
1-2 days
Datablad:
IPS110N12N3GBKMA1.pdf

Introduktion

We can supply IPS110N12N3GBKMA1, use the request quote form to request IPS110N12N3GBKMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPS110N12N3GBKMA1.The price and lead time for IPS110N12N3GBKMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPS110N12N3GBKMA1.We look forward to working with you to establish long-term relations of cooperation

specifikationer

Tilstand New & Unused, Original Packing
Oprindelse Contact us
Vgs (th) (Max) @ Id:4V @ 83µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverandør Device Package:PG-TO251-3
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:11 mOhm @ 75A, 10V
Power Dissipation (Max):136W (Tc)
Emballage:Tube
Pakke / tilfælde:TO-251-3 Stub Leads, IPak
Andre navne:IPS110N12N3 G
IPS110N12N3 G-ND
IPS110N12N3GBKMA1TR-ND
SP000674456
Driftstemperatur:-55°C ~ 175°C (TJ)
Monteringstype:Through Hole
Fugtfølsomhedsniveau (MSL):1 (Unlimited)
Blyfri Status / RoHS Status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:4310pF @ 60V
Gate Charge (Qg) (Max) @ Vgs:65nC @ 10V
FET Type:N-Channel
FET-funktion:-
Drevspænding (Maks. RDS On, Min Rds On):10V
Afløb til Source Voltage (VDSS):120V
Detaljeret beskrivelse:N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3
Strøm - Kontinuerlig afløb (Id) @ 25 ° C:75A (Tc)
Email:[email protected]

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