IPS110N12N3GBKMA1
IPS110N12N3GBKMA1
Part Number:
IPS110N12N3GBKMA1
Výrobce:
International Rectifier (Infineon Technologies)
Popis:
MOSFET N-CH 120V 75A TO251-3
Stav volného vedení / RoHS:
Bez olova / V souladu RoHS
dostupné množství:
38027 Pieces
Čas doručení:
1-2 days
Datový list:
IPS110N12N3GBKMA1.pdf

Úvod

We can supply IPS110N12N3GBKMA1, use the request quote form to request IPS110N12N3GBKMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPS110N12N3GBKMA1.The price and lead time for IPS110N12N3GBKMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPS110N12N3GBKMA1.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Stav New & Unused, Original Packing
Původ Contact us
Vgs (th) (max) 'Id:4V @ 83µA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:PG-TO251-3
Série:OptiMOS™
RDS On (Max) @ Id, Vgs:11 mOhm @ 75A, 10V
Ztráta energie (Max):136W (Tc)
Obal:Tube
Paket / krabice:TO-251-3 Stub Leads, IPak
Ostatní jména:IPS110N12N3 G
IPS110N12N3 G-ND
IPS110N12N3GBKMA1TR-ND
SP000674456
Provozní teplota:-55°C ~ 175°C (TJ)
Typ montáže:Through Hole
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:4310pF @ 60V
Nabíjení brány (Qg) (Max) @ Vgs:65nC @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):10V
Drain na zdroj napětí (Vdss):120V
Detailní popis:N-Channel 120V 75A (Tc) 136W (Tc) Through Hole PG-TO251-3
Proud - kontinuální odtok (Id) @ 25 ° C:75A (Tc)
Email:[email protected]

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