FDMQ8203
FDMQ8203
Modèle de produit:
FDMQ8203
Fabricant:
AMI Semiconductor / ON Semiconductor
La description:
MOSFET 2N/2P-CH 100V/80V 12-MLP
État sans plomb / État RoHS:
Sans plomb / conforme à la directive RoHS
quantité disponible:
44503 Pieces
Heure de livraison:
1-2 days
Fiche technique:
FDMQ8203.pdf

introduction

We can supply FDMQ8203, use the request quote form to request FDMQ8203 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDMQ8203.The price and lead time for FDMQ8203 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDMQ8203.We look forward to working with you to establish long-term relations of cooperation

Spécifications

État New & Unused, Original Packing
Origine Contact us
Vgs (th) (Max) @ Id:4V @ 250µA
Package composant fournisseur:12-MLP (5x4.5)
Séries:GreenBridge™ PowerTrench®
Rds On (Max) @ Id, Vgs:110 mOhm @ 3A, 10V
Puissance - Max:2.5W
Emballage:Cut Tape (CT)
Package / Boîte:12-WDFN Exposed Pad
Autres noms:FDMQ8203CT
Température de fonctionnement:-55°C ~ 150°C (TJ)
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:6 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Capacité d'entrée (Ciss) (Max) @ Vds:210pF @ 50V
Charge de la porte (Qg) (Max) @ Vgs:5nC @ 10V
type de FET:2 N and 2 P-Channel (H-Bridge)
Fonction FET:Logic Level Gate
Tension drain-source (Vdss):100V, 80V
Description détaillée:Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V, 80V 3.4A, 2.6A 2.5W Surface Mount 12-MLP (5x4.5)
Courant - Drainage continu (Id) à 25 ° C:3.4A, 2.6A
Numéro de pièce de base:FDMQ8203
Email:[email protected]

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